FDD5614P
Manufacturer:
On Semiconductor
Mfr.Part #:
FDD5614P
Datasheet:
Description:
MOSFETs TO-252-3 SMD/SMT P-Channel number of channels:1 42 W 60 V Continuous Drain Current (ID):15 A 24 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | -60 V |
| Length | 6.73 mm |
| Width | 6.6 mm |
| Termination | SMD/SMT |
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Resistance | 100 mΩ |
| Height | 2.39 mm |
| Packaging | Reel |
| Lead Free | Lead Free |
| Radiation Hardening | No |
| RoHS | Compliant |
| Voltage | 60 V |
| REACH SVHC | No SVHC |
| Weight | 4.535924 g |
| Contact Plating | Tin |
| Number of Elements | 1 |
| Current | 15 A |
| Current Rating | -15 A |
| Lifecycle Status | Production (Last Updated: 7 months ago) |
| Max Power Dissipation | 42 W |
| Power Dissipation | 42 W |
| Threshold Voltage | -1.6 V |
| Number of Channels | 1 |
| Input capacitance | 759 pF |
| Continuous Drain Current (ID) | 15 A |
| Rds On Max | 100 mΩ |
| Drain to Source Voltage (Vdss) | -60 V |
| Turn-On Delay Time | 7 ns |
| Turn-Off Delay Time | 19 ns |
| Element Configuration | Single |
| Fall Time | 12 ns |
| Rise Time | 10 ns |
| Dual Supply Voltage | -60 V |
| Gate Charge | 24 nC |
| Drain to Source Resistance | 76 mΩ |
| Max Junction Temperature (Tj) | 175 °C |
| Nominal Vgs | -1.6 V |
| Gate to Source Voltage (Vgs) | -20 V, 20 V |
| Drain to Source Breakdown Voltage (Vds) | 60 V |
| Schedule B | 8541290080 |
| Manufacturer Lifecycle Status | ACTIVE (Last Updated: 7 months ago) |
| Gate to Source Threshold Voltage | 3 V |
| Drain to Source Breakdown Voltage | -60 V |
| FET Type(Transistor Polarity) | P-Channel |
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